@InProceedings{FornariForRapAbrTra:2017:FoStDe,
author = "Fornari, Celso Israel and Fornari, Gabriel and Rappl, Paulo
Henrique de Oliveira and Abramof, Eduardo and Travelho, Jeronimo
dos Santos",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais
(INPE)}",
title = "Formation of structural defects during Bi2Te3 epitaxy investigated
by a Monte Carlo computational model",
booktitle = "Resumos...",
year = "2017",
organization = "Brazilian Workshop on Semiconductor Physics, 18. (BWSP)",
abstract = "Bismuth telluride, in Bi2Te3 phase, is an archetype of
three-dimensional topological insulator. This material presents
topological surface states (TSS), shaped like a Dirac cone,
crossing the material band gap [1]. These TSS present linear
dispersion, resulting in massless Dirac fermions in the surface
with extremely high Fermi velocities and bulk insulator behavior.
The massless Dirac fermions possess spin-locked to the momentum
and are protected from backscattering due to time reversal
symmetry, which open-up several possibilities of applications in
spintronics and quantum computing [2]. However, presence of
structural defects in this compound changes the chemical
potential, resulting in bulk conduction which overwhelms the
metallic surface states, hampering these topological states from
electrical measurements. By controlling the chemical potential of
the sample is possible to tune from p to n, passing through a bulk
insulator phase. A truly topological insulator compound must have
the Fermi level located inside the material band gap, i.e.,
crossing only the TSS [3]. In this work, we applied a Monte Carlo
epitaxial growth model to study the case of bismuth telluride. By
changing the growth conditions in the model, we monitored the
formation of structural defects. The computational model was
validated to a set of experimental data. The simulation results
were able to explain a p-to-n transition that occurs by increasing
the substrate temperature in which the epitaxial films are grown.
References: [1] Y.L. Chen et al., Science 325, 178 (2009); [2] Y.
Ando, J. Phys. Soc. Japan. 82, 102001 (2013); [3] K. Hoefer et
al., PNAS 111, 14979 (2014).",
conference-location = "Maresias, SP",
conference-year = "14-18 ago.",
language = "en",
ibi = "8JMKD3MGP3W34P/3PGF64P",
url = "http://urlib.net/ibi/8JMKD3MGP3W34P/3PGF64P",
targetfile = "abramof_formation.pdf",
urlaccessdate = "27 abr. 2024"
}